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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC856W; BC857W; BC858W PNP general purpose transistors
Product specification Supersedes data of 1999 Apr 12 2002 Feb 04
Philips Semiconductors
Product specification
PNP general purpose transistors
FEATURES * Low current (max. 100 mA) * Low voltage (max. 65 V). APPLICATIONS * General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC846W, BC847W and BC848W. MARKING TYPE NUMBER BC856W BC856AW BC856BW BC857W BC857AW BC857BW BC857CW BC858W Note 1. * = -: made in Hong Kong. * = t: made in Malaysia. MARKING CODE(1) PINNING
BC856W; BC857W; BC858W
PIN 1 2 3 base emitter collector
DESCRIPTION
handbook, halfpage
3
3 1 2
1 Top view 2
MAM048
3D* 3A* 3B* 3H* 3E* 3F* 3G* 3M* Fig.1
Simplified outline (SOT323; SC70) and symbol.
2002 Feb 04
2
Philips Semiconductors
Product specification
PNP general purpose transistors
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO BC856W BC857W BC858W VCEO collector-emitter voltage BC856W BC857W BC858W VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SOT323 standard mounting conditions. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT323 standard mounting conditions. PARAMETER thermal resistance from junction to ambient emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open collector open base PARAMETER collector-base voltage
BC856W; BC857W; BC858W
CONDITIONS open emitter - - - - - - - - - - Tamb 25 C; note 1 -
MIN.
MAX. -80 -50 -30 -65 -45 -30 -5 -100 -200 -200 200 +150 150 +150 V V V V V V V
UNIT
mA mA mA mW C C C
-65 - -65
CONDITIONS in free air; note 1
VALUE 625
UNIT K/W
2002 Feb 04
3
Philips Semiconductors
Product specification
PNP general purpose transistors
CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current
BC856W; BC857W; BC858W
CONDITIONS VCB = -30 V; IE = 0 VCB = -30 V; IE = 0; Tj = 150 C
MIN. - - - 125 125 125 220 420
TYP. -1 - - - - - - - -75 -250 -700 -850 -650 - - - - -
MAX. -15 -4 -100 475 800 250 475 800 -300 -600 - - -750 -820 3 12 - 10
UNIT nA A nA
IEBO hFE
emitter-base cut-off current DC current gain BC856W BC857W; BC858W BC856AW; BC857AW BC856BW; BC857BW BC857CW
VEB = -5 V; IC = 0 IC = -2 mA; VCE = -5 V
VCEsat
collector-emitter saturation voltage
IC = -10 mA; IB = -0.5 mA - IC = -100 mA; IB = -5 mA; - note 1
mV mV mV mV mV mV pF pF MHz dB
VBEsat
base-emitter saturation voltage
IC = -10 mA; IB = -0.5 mA - IC = -100 mA; IB = -5 mA; - note 1
VBE Cc Ce fT F
base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure
IC = -2 mA; VCE = -5 V IC = -10 mA; VCE = -5 V VCB = -10 V; IE = Ie = 0; f = 1 MHz VEB = -0.5 V; IC = Ic = 0; f = 1 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz IC = -200 A; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200 Hz
-600 - - - 100 -
Note 1. Pulse test: tp 300 s; 0.02.
2002 Feb 04
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856W; BC857W; BC858W
handbook, halfpage
500
MGT711
handbook, halfpage
hFE 400
(1)
-1200 VBE (mV) -1000 -800
MGT712
(1)
300 -600 200
(2)
(2)
-400 100
(3)
(3)
-200
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
BC857AW; VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857AW; VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
-104 handbook, halfpage VCEsat (mV) -103
MGT713
handbook, halfpage
-1200 VBEsat (mV) -1000 -800 -600
MGT714
(1) (2)
(3)
-102
(1)
-400 -200
(3) (2)
-10 -10-1
-1
-10
-102 -103 I C (mA)
0 -10-1
-1
-10
-102 -103 I C (mA)
BC857AW; IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857AW; IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
2002 Feb 04
5
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856W; BC857W; BC858W
handbook, halfpage
1000
MGT715
handbook, halfpage
hFE 800
-1200 VBE (mV) -1000 -800
MGT716
(1)
600
(1)
(2)
-600 -400 -200
(3)
400
(2)
200
(3)
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
BC857BW; VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857BW; VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.6
DC current gain as a function of collector current; typical values.
Fig.7
Base-emitter voltage as a function of collector current; typical values.
-104 handbook, halfpage VCEsat (mV) -103
MGT717
handbook, halfpage
-1200 VBEsat (mV) -1000 -800
MGT718
(1) (2)
-600
(3)
-102
(1)
-400 -200
(3) (2)
-10 -10-1
-1
-10
-102 -103 I C (mA)
0 -10-1
-1
-10
-102 -103 I C (mA)
BC857BW; IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857BW; IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.8
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.9
Base-emitter saturation voltage as a function of collector current; typical values.
2002 Feb 04
6
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856W; BC857W; BC858W
handbook, halfpage
1000
MGT719
handbook, halfpage
(1)
hFE 800
-1200 VBE (mV) -1000 -800
MGT720
(1)
600
(2) (2)
-600 -400
400
(3) (3)
200
-200
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
0 -10-1
-1
-10
-102
-103 I C (mA)
BC857CW; VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857CW; VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.10 DC current gain as a function of collector current; typical values.
Fig.11 Base-emitter voltage as a function of collector current; typical values.
-104 handbook, halfpage VCEsat (mV) -103
MGT721
handbook, halfpage
-1200 VBEsat (mV) -1000 -800
MGT722
(1) (2)
-600
(3)
-102
(1)
-400 -200
(3) (2)
-10 -10-1
-1
-10
-102 -103 I C (mA)
0 -10-1
-1
-10
-102 -103 I C (mA)
BC857CW; IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857CW; IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a function of collector current; typical values.
2002 Feb 04
7
Philips Semiconductors
Product specification
PNP general purpose transistors
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BC856W; BC857W; BC858W
SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2002 Feb 04
8
Philips Semiconductors
Product specification
PNP general purpose transistors
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development
BC856W; BC857W; BC858W
DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Feb 04
9
Philips Semiconductors
Product specification
PNP general purpose transistors
NOTES
BC856W; BC857W; BC858W
2002 Feb 04
10
Philips Semiconductors
Product specification
PNP general purpose transistors
NOTES
BC856W; BC857W; BC858W
2002 Feb 04
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp12
Date of release: 2002
Feb 04
Document order number:
9397 750 09168

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